Features
- Bluetooth Low Energy
5.3 transceiver integrating Controller and Host layers
- Supported data rates: 1 Mbps, 2 Mbps, and Long Range (500 kbps, 125 kbps)
- TX power: -20 dBm to +7 dBm
- -98 dBm sensitivity (in 1 Mbps mode)
- -94 dBm sensitivity (in 2 Mbps mode)
- -101 dBm sensitivity (in Long Range 500 kbps mode)
- -104 dBm sensitivity (in Long Range 125 kbps mode)
- TX current: 4.0 mA @ 0 dBm, 1 Mbps
- RX current: 3.5 mA @ 1 Mbps
- AoA/AoD, LE Isochronous Channels
- ARM®
Cortex®-M4F 32-bit micro-processor with floating point support
- Up to 96 MHz clock frequency
- Built-in Memory Protection Unit (MPU) supporting eight programmable regions
- Hardware Floating Point Unit (FPU)
- Built-in Nested Vectored Interrupt Controller (NVIC)
- Non-maskable Interrupt (NMI) input
- Serial Wire Debug (SWD) with 16 breakpoints, two watchpoints, and a debug timestamp counter
- 51 µA/MHz execution from Flash @ 3.3 V, 96 MHz
- On-chip memory
- 512 KB data SRAM with retention capabilities
- 8 KB cache SRAM with retention capabilities
- Stack ROM (including boot ROM and Bluetooth LE Stack)
- 1 MB internal QSPI Flash
- 8 MB internal PSRAM (for GR5526VGBIP and GR5526RGNIP only)
- Digital peripherals
- Two general-purpose DMA engines, each with six channels and up to 16 handshaking interfaces
- USB 2.0 full speed (12 Mbps) controller with on-chip PHY and dedicated DMA controller
- Internal Octal SPI DDR interfaces to support 8 MB internal PSRAM at up to 48 MHz (for GR5526VGBIP and GR5526RGNIP only)
- Analog peripherals
- One 13-bit Sense ADC with a sampling rate of 1 Msps. It supports up to 8 external I/O channels and 3 internal signal channels.
- Built-in temperature and voltage sensors
- Low-power comparator, supporting wakeup from deep sleep mode
- Flexible serial
peripherals
- 6 x UART modules up to 4 Mbps, with all modules supporting flow control and IrDA
- 6 x I2C modules for peripheral communication, up to 3.4 MHz
- 1 x 8-bit/16-bit/32-bit SPI master interface and 1 x SPI slave interface for host communication
- 2 x I2S interfaces (1 I2S master interface and 1 I2S slave interface)
- PDM interface with hardware sampling rate converter
- 1 x ISO7816 interface
- Display/Graphics
- 2.5D GPU for graphics acceleration (for GR5526VGBIP and GR5526RGNIP only)
- 1 x Dual-lane SPI (DSPI) interface for display, with Mobile Industry Processor Interface (MIPI) Display Bus Interface (DBI) Type-C support
- 3 x Quad SPI (QSPI) interfaces, up to 48 MHz; supporting direct access via memory mapping when connecting with external NOR Flash
- Display Controller (DC) module with MIPI DBI Type-C support and 2D graphics blending integrated (for GR5526VGBIP and GR5526RGNIP only)
- Security
- Complete secure
computing engine:
- AES 128-bit/192-bit/256-bit symmetric encryption (ECB, CBC)
- Hash-based Message Authentication Code (HMAC-SHA256)
- Public key cryptography (PKC)
- True random number generator (TRNG)
- Comprehensive
security operation mechanism:
- Secure boot
- Encrypted firmware running directly from Flash
- eFuse for encrypted key storage
- Differentiate application data key and firmware key, supporting one data key per each device/product
- Complete secure
computing engine:
- I/O Peripherals
- 50 I/O
pins in total
- 34 general-purpose I/O (GPIO) pins
- 8 always-on I/O (AON IO) pins, supporting wakeup from deep sleep mode
- 8 mixed signal I/O (MSIO) pins, configurable to be digital/analog signal interface
- 50 I/O
pins in total
- Timer
- Two general-purpose, 32-bit timer modules
- A timer module composed of two programmable 32-bit or 16-bit down counters
- An internal sleep timer that can be used to wake the device up from deep sleep mode
- Two PWM modules with edge alignment mode and center alignment mode, each with 3 channels
- 2 x real-time counters (RTC): 1 x Calendar, 1 x RTC
- Power management
- On-chip DC-DC to provide RF Analog voltage and supply core LDO
- On-chip I/O LDO to provide I/O voltage and supply external components, maximum I/O LDO drive strength: 30 mA
- Programmable thresholds for brownout detection (BOD)
- Supply voltage: 2.4 V–4.35 V
- I/O voltage: 1.8 V–3.6 V
- Low-power consumption
modes
- Sleep mode: 3.3 µA (Typical) at 3.3 V VBAT input with 128 KB SRAM retention on and LFXO_32K off; woken up by 8 sources of always-on domain
- Ultra deep sleep mode: 2.4 µA (Typical); internal power (all SRAM included) and LFXO_32K removed from entire chip except always-on domain; woken up by Sleep Timer and AON GPIOs
- OFF mode: 200 nA (Typical); nothing on except VBAT, and chip in reset mode
- Packages
- BGA83: 4.3 x 4.3 x 0.96 (mm), 0.4 mm pitch
- QFN68: 7.0 x 7.0 x 0.85 (mm), 0.35 mm pitch
-
Operating temperature range: -40°C to +85°C