A Bluetooth Low Energy
(Bluetooth LE) 5.1 transceiver integrates Controller and Host layers
Supported
data rates: 1 Mbps, 2 Mbps, Long Range 500 kbps, Long Range 125 kbps
TX power:
-20 dBm to +7 dBm
-97 dBm
sensitivity (in 1 Mbps mode)
-93 dBm
sensitivity (in 2 Mbps mode)
-99.5 dBm
sensitivity (in Long Range 500 kbps mode)
-103 dBm
sensitivity (in Long Range 125 kbps mode)
TX
current: 3.05 mA @ 0 dBm, 1 Mbps
RX
current: 3.9 mA @ 1 Mbps
ARM®
Cortex®-M4F 32-bit micro-processor with floating point support
Maximum
frequency: 64 MHz
Power
consumption: 30 µA/MHz
Memory
256 KB RAM with retention (four 8 KB RAM blocks and seven 32 KB RAM blocks) for GR5515
series SoCs, and 128 KB RAM with retention (four 8 KB RAM blocks and three 32 KB RAM
blocks) for the GR5513 SoC
1 MB Flash for GR5515 series SoCs and 512 KB Flash for the GR5513 SoC (exceptions:
GR5515I0ND/GR5515I0NDA requiring external QSPI Flash and GR5515IENDU requiring 512 KB
embedded Flash)
Power management
On-chip
DC-DC Converter
On-chip
I/O LDO to provide I/O voltage and supply external components
Supply
voltage: 1.7 V to 3.8 V. The supply voltage of GR5515I0ND/GR5515I0NDA (when the external
Flash of GR5515I0NDA supplied by high voltage) shall equal the working voltage of
external QSPI Flash
I/O
voltage: 1.8 V to 3.3 V (Typical) (for GR5515I0ND/GR5515I0NDA/GR5515IENDU/GR5513BENDU
Flash using high voltage, the VIO_LDO_OUT shall be connected to VBATL in schematic
circuit.)
OFF mode: 0.15 µA (Typical); nothing is on except VBAT, chip in reset
mode
Ultra deep
sleep mode: 0.65 µA (Typical); I/O LDO off, no memory retention; woken up by AON GPIO or
AON Timer
Sleep
mode: 1.3 µA (Typical) when I/O LDO and BOD/BOD2 turned off, lowest voltage level for
memory retention, and 32 KB memory retention; woken up by AON_RTC, AON GPIO, or
Bluetooth LE Event
Peripherals
2 x QSPI interfaces, up to 32 MHz
2 x SPI interfaces (1 SPI Master Interface with 2 slave CS pins + 1 SPI Slave
Interface), up to 32 MHz
2 x I2C interfaces at 100 kHz, 400 kHz, 1 MHz, 2 MHz
