Features
- A Bluetooth Low Energy
(Bluetooth LE) 5.1 transceiver integrates Controller and Host layers
- Supported data rates: 1 Mbps, 2 Mbps, and Long Range (500 kbps, 125kbps)
- TX power: -20 dBm to +7 dBm
- -96 dBm sensitivity (in 1 Mbps mode)
- -93 dBm sensitivity (in 2 Mbps mode)
- -99 dBm sensitivity (in Long Range 500 kbps mode)
- -102 dBm sensitivity (in Long Range 125 kbps mode)
- TX current: 5.6 mA @ 0 dBm, 1 Mbps
- RX current: 4.8 mA @ 1 Mbps
- ARM®
Cortex®-M4F 32-bit micro-processor with floating point support
- Up to 64 MHz clock frequency
- Built-in Memory Protection Unit (MPU) supporting eight programmable regions
- Hardware Floating Point Unit (FPU)
- Built-in Nested Vectored Interrupt Controller (NVIC)
- Non-maskable Interrupt (NMI) input
- Serial Wire Debug (SWD) with 6 breakpoints, two watchpoints, and a debug timestamp counter
- 51 µA/MHz execution from Flash @ 3.3 V, 64 MHz
- On-chip memory
- 256 KB SRAM with retention capabilities (four 8 KB SRAM blocks and seven 32 KB SRAM blocks) for GR5515 series SoCs, and 128 KB SRAM with retention capabilities (four 8 KB SRAM blocks and three 32 KB SRAM blocks) for the GR5513 SoC
- 8 KB cache SRAM with retention capabilities
- Stack ROM (including boot ROM and Bluetooth LE Stack)
- 1 MB internal QSPI Flash for GR5515 series SoCs and 512 KB internal QSPI Flash for the GR5513 SoC (exceptions: GR5515I0NDA requiring external QSPI Flash and GR5515IENDU requiring 512 KB embedded Flash)
- Digital peripherals
- One general-purpose DMA engine with 8 channels and 16 handshaking interfaces
- Analog peripherals
- One 13-bit Sense ADC with the sampling rate of 1 Msps. It supports up to five external I/O channels and three internal signal channels
- Built-in temperature and voltage sensors
- Low-power comparator, supporting wakeup from deep sleep mode
- Flexible serial
peripherals
- 2 x QSPI interfaces, up to 32 MHz
- 2 x UART modules up to 4 Mbps, with all modules supporting flow control and only UART0 supporting DMA
- 2 x I2C modules for peripheral communication, up to 2 MHz
- 1x SPI master interface and 1 x SPI slave interface for host communication, up to 32 MHz
- 2 x I2S interfaces (1 I2S master interface + 1 I2S slave interface)
- ISO7816 interface
- Security
- Complete secure computing engine:
- AES 128-bit/192-bit/256-bit symmetric encryption (ECB, CBC)
- Hash-based Message Authentication Code (HMAC-SHA256)
- Public key cryptography (PKC)
- True random number generator (TRNG)
- Comprehensive security operation mechanism:
- Secure boot
- Encrypted firmware running directly from Flash
- eFuse for encrypted key storage
- Differentiate application data key and firmware key, supporting one data key per device/product
- Complete secure computing engine:
- I/O peripherals
- 39 I/O pins in total
- 26 general-purpose I/O (GPIO) pins
- 8 always-on I/O (AON IO) pins, supporting wakeup from deep sleep mode
- 5 mixed signal I/O (MSIO) pins, configurable to be digital/analog signal interface
- 39 I/O pins in total
- Timer
- Two general-purpose, 32-bit timer modules
- A timer module composed of two programmable 32-bit or 16-bit down counters
- An internal sleep timer that can be used to wake the device up from deep sleep mode
- Two PWM modules with edge alignment mode and center alignment mode, each with 3 channels
- 1 x real-time counter (RTC), can be used as Calendar
- 1 x AON watchdog timer, working in both system sleep and active status
- Power management
- On-chip DC-DC to provide RF Analog voltage and supply core LDO
- On-chip I/O LDO to provide I/O voltage and supply external components, maximum I/O LDO drive strength: 30 mA
- Programmable thresholds for brownout detection (BoD reset and BoD interrupt)
- Supply voltage: 2.2 V to 3.8 V. The supply voltage of GR5515I0NDA (when the external Flash of GR5515I0NDA is supplied by high voltage) shall equal the working voltage of the external QSPI Flash
- I/O voltage: 1.8 V to 3.3 V (Typical) (for GR5515I0NDA/GR5515IENDU/GR5513BENDU Flash using high voltage, the VIO_LDO_OUT shall be connected to VBATL in schematic circuit.)
- Low-power consumption modes
- Deep sleep mode: 2.7 µA (Typical), with full 256 KB SRAM retention
- Ultra deep sleep mode: 1.8 µA (Typical), no SRAM retention
- Off mode: 0.15 uA (Typical), nothing on except VBAT, and chip in reset mode
- Packages
- QFN56: 7 mm x 7 mm, 0.40 mm pitch
- BGA68: 5.3 mm x 5.3 mm, 0.50 mm pitch
- BGA55: 3.5 mm x 3.5 mm, 0.40 mm pitch
- QFN40: 5 mm x 5 mm, 0.40 mm pitch
- Operating temperature range: -40°C to +85°C
